Page 8 - Shimadzu EPMA-8050G

Unprecedented Spatial Resolution Large Beam Current Enabling

Ultra-High-Sensitivity Analysis

The system offers the ultimate in secondary-electron image resolution under the beam current In SEM and EPMA with the FE type, the uniquely large beam current (up to 3 A with a 30 kV
conditions used for analysis. (With a 10 kV accelerating voltage, 20 nm at 10 nA / 50 nm at 100 accelerating voltage) dramatically enhances the detection sensitivity for ultra trace elements. This
nA / 150 nm at 1 A). The results are very clear in comparison to a conventional electron gun enables ultra-trace component imaging in element mapping.
(CeB6, tungsten). In addition, there is no need to replace the objective aperture across the entire beam current
The same resolution image can be obtained with a dramatically larger beam current than with a range, so the analysis process can be fully automated, with no concerns about axis offset.
conventional electron gun, so extremely high-sensitivity X-ray analysis can be performed. These three images show the results* of a mapping analysis of approx. 1 % Si in stainless steel,
A further point of interest is SEM imaging with a 1 A beam current. Only the EPMA-8050G using different beam currents. The roughness decreases as the beam current increases, enabling
provides a beam current of at least 1 A, and moreover, finely focuses the beam to this point. the areas containing Si to be precisely identified.
* In all of the measurements, the accelerating voltage was 10 kV and the sampling interval was 50 msec. The measurements required approx. 1 hour.

FE CeB6 Tungsten

10nA

100nA

Si
100nA 5µm

500nA

1µA This current cannot be set. This current cannot be set.

Si
5µm
Comparison of Electron Gun Beam Characteristics (10 kV accelerating voltage)

EPMA-8050G Irradiation Current Resolution 1.5µA
10 nA 20 nm
Resolution at each current condition 100 nA 50 nm
(Acceleration voltage is 10 kV)
1000 nA 150 nm
*The resolution described is the secondary electron resolution under each condition.
*Switching and adjustment of the objective aperture are not necessary.
Si
5µm
EPMA-8050G
Electron Probe Microanalyzer
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