Page 14 - Material Characterizations

EPMA

NEW

CUTTING-EDGE FE ELECTRON

OPTICAL SYSTEM

EPMA-8050G

Key Features and Capabilities
• High brightness Schottky electron source (ie. Field Emission or FE)
• 3nm - highest Secondary Electron Image resolution for an EPMA
• Ultra high sensitivity analysis
• Ultra high resolution mapping
• Chemical State Analysis
• Wavelength Dispersive X-Ray (WDX) Spectrometer
• Secondary Electron Imaging
• Backscatter Electron Imaging
• Optical Microscope Imaging
• Mapping
• Magnification 400,000x
• Cathode-Luminescence attachment*

Unprecedented Spatial Resolution Ultra-High Sensitivity

FE CeB6 Tungsten

100nA
10nA

5µm

500nA
100nA

5µm

This current This current
1µA
cannot be set cannot be set 1.5µA

Comparison of Electron Gun Beam Characteristics (10 kV accelerating voltage) 5µm
Mapping Analysis of 1% Si in Stainless Steel
(10 kV accelerating voltage)
Elemental Range • Standard 5B to 92U • Optional 4Be to 92U

18 Excellence in Science